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STGW80H65DFB Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors
Applications
• Photovoltaic inverters
• High frequency converters
Specifications
Product Attribute | Attribute Value |
---|---|
STMicroelectronics | |
Product Category: | IGBT Transistors |
Si | |
TO-247-3 | |
Through Hole | |
Single | |
650 V | |
1.6 V | |
- 20 V, + 20 V | |
120 A | |
469 W | |
- 55 C | |
+ 175 C | |
Tube | |
Continuous Collector Current Ic Max: | 80 A |
Gate-Emitter Leakage Current: | 250 nA |
Subcategory: | IGBTs |
Unit Weight: | 1.340411 oz |
Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Shopping Guide
Shipping | Delivery period |
For in-stock parts, orders are estimated to ship out in 3 days.
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Returning warranty | Returning |
Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
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Warranty |
All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
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