MT29F2G08ABAEAH4-IT:E NAND Flash Memory Ic Chip

MT29F2G08ABAEAH4-IT:E NAND Flash Asynchronous SLC 2Gbit 8bit 35mA 256MX8 VFBGA-63

Specifications

Description

Micron NAND Flash devices include an asynchronous data interface for high-perform-ance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#).

This hardware interface creates a low pin-count device with a standard pinout that re-mains the same from one density to another, enabling future upgrades to higher densi-ties with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.

This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

Array Addressing – MT29F2G08 (x8)

Notes: 1. Block address concatenated with page address = actual page address. CAx = column ad-dress; PAx = page address; BAx = block address.

2. If CA11 is 1, then CA[10:6] must be 0.

3. BA6 controls plane selection.

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant1

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 1024 blocks per plane

– Device size: 2Gb: 2048 blocks

• Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs 3

– Program page: 200µs (TYP: 1.8V, 3.3V)3

– Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode4

– Read page cache mode 4

– One-time programmable (OTP) mode

– Two-plane commands 4

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for detecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion

• WP# signal: Write protect entire devic

• First block (block address 00h) is valid when ship-ped from factory with ECC. For minimum required ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

• RESET (FFh) required as first command after power-on

• Alternate method of device initialization (Nand_Init) after power up (contact factory)

• Internal data move operations supported within the plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

– VCC: 2.7–3.6V

– VCC: 1.7–1.95V

• Operating temperature

– Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC

– Automotive Industrial (AIT): –40°C to +85°C

– Automotive (AAT): –40°C to +105°C

• Package – 48-pin TSOP type 1, CPL2 – 63-ball VFBGA

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